High temperature gate oxide process improvement

Ayayi Ahyi

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MATLAB

Microsoft Excel

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Posted Jun 11, 2024

To solve poor electrical performance of SiC-FET oxides grown at 1430C. Process gas mixtures, sample handling and thermal profiles had to be modified

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Ayayi Ahyi

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Time to failure measurements of MOS capacitor sets
Time to failure measurements of MOS capacitor sets
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