High temperature gate oxide process improvement
Ayayi Ahyi
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Posted Jun 11, 2024
To solve poor electrical performance of SiC-FET oxides grown at 1430C. Process gas mixtures, sample handling and thermal profiles had to be modified
Ayayi Ahyi
Posted Jun 11, 2024
To solve poor electrical performance of SiC-FET oxides grown at 1430C. Process gas mixtures, sample handling and thermal profiles had to be modified
