Expert in Scientific Writing & Grant Proposals

Time to failure measurements of MOS capacitor sets
Time to failure measurements of MOS capacitor sets

On wafer devices were continuously tested for several weeks until breakdown. To be significant a large number of devices were tested.

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High temperature gate oxide process improvement
High temperature gate oxide process improvement

To solve poor electrical performance of SiC-FET oxides grown at 1430C. Process gas mixtures, sample handling and thermal profiles had to be modified

Scientist
MATLAB
Microsoft Excel

Successful Scientific Grant Proposal
Successful Scientific Grant Proposal

High temperature SiC-MOS device successful $598k NSF-PFI grant proposal for Auburn University. Acted as Principal investigator of the completed project.

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Scientist
Technical Writer
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