Time to failure measurements of MOS capacitor sets
On wafer devices were continuously tested for several weeks until breakdown. To be significant a large number of devices were tested.
Researcher
Scientist
Professor
MATLAB
Microsoft Excel
High temperature gate oxide process improvement
To solve poor electrical performance of SiC-FET oxides grown at 1430C. Process gas mixtures, sample handling and thermal profiles had to be modified
Scientist
MATLAB
Microsoft Excel
Successful Scientific Grant Proposal
High temperature SiC-MOS device successful $598k NSF-PFI grant proposal for Auburn University. Acted as Principal investigator of the completed project.
Researcher
Scientist
Technical Writer
MATLAB
Microsoft Excel